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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD1062 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, converters General high-current switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg HAN C PARAMETER IN Collector-base voltage SEM GE Open base CONDITIONS OND IC TOR UC VALUE -60 -50 -6 -12 -15 UNIT V V V A A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature Open collector TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A;IB=-0.3A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 TYP. 2SB826 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA Switching times ton ts tf Turn-on time Storage time Fall time ANG CH S 140-280 hFE-1 classifications Q 70-140 R 100-200 IN SEM E IC=5.0A ;IB1=- IB2=0.5A OND IC TOR UC 0.2 0.1 0.4 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB826 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB826 SEM GE HAN INC OND IC TOR UC 4 |
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